Two-Transistor Active Pixel Image Sensor with Active Diode Reset

摘要：

A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm×7μm pixel size with a fill factor of 38％. The pixel characteristics are presented and discussed.

作者: Dongwei Zhang Frank He Amine Bermak Mansun Chan

作者单位: Department of ECE, Hong Kong University of Science and Technology, Hong Kong, China TSRC, School of EECS, Peking University, Beijing, 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1468-1470

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）