会议专题

Column-Parallel Integrating ADCs for Infrared Image Sensor

10bit column-parallel integrating ADCs intended for infrared image sensor are presented in this paper. The column scale is 160 and the width of each column cell is 32μm. The ADCs introduce a proposed architecture to eliminate offset error and a novel circuit structure to substrate background signal. A prototype ADCs is designed in 0.3 5 μm CMOS technology with 5V power supply. The simulation results show a peak SFDR of 69.17dB with 25uW power of each column cell.

Ziqi Song Dong Wu Yanzhao Shen Jun Xu

Institute of Microelectronics, Tsinghua University, Beijing 100084, China

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1477-1479

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)