Column-Parallel Integrating ADCs for Infrared Image Sensor
10bit column-parallel integrating ADCs intended for infrared image sensor are presented in this paper. The column scale is 160 and the width of each column cell is 32μm. The ADCs introduce a proposed architecture to eliminate offset error and a novel circuit structure to substrate background signal. A prototype ADCs is designed in 0.3 5 μm CMOS technology with 5V power supply. The simulation results show a peak SFDR of 69.17dB with 25uW power of each column cell.
Ziqi Song Dong Wu Yanzhao Shen Jun Xu
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
国际会议
上海
英文
1477-1479
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)