Study on Compensation Method for Vertical Trench Using Anisotropic Wet Etching

摘要：

This paper investigates anisotropic wet etching characteristics of (110)-oriented silicon wafers in KOH etchant for obtaining vertical trench. To obtain a near rectangled trench instead of parallelogrammic trench with concave corners of 70° and 110°, a new compensation method was proposed. With this design, a trench with all sidewalls vertical was obtained by an over etching of silicon. Due to different widths of the trench, the over etching rate in releasing inclined crystal plane 111 varies from 0.32μm/min to 0.43μm/min.

作者: Mingquan Yuan Kan Yu Xiaomei Yu

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China Institute of Microelectronics, Peking University, Beijing 100871, China National Key Laboratory of S

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1492-1494

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）