Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation
Point defects introduced by homoepitaxial growth of thin films on SrTiO3 substrates were studied by means of positron annihilation. The SrTiO3 films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion of oxygen from the substrate into the film, and the resultant introduction of oxygen vacancies. The impact of nitridation on open volumes in thin HfSiOx films fabricated on Si by atomic layer deposition was also studied. After plasma nitridation, the size of open volumes in the films decreased. An expansion of open volumes, however, was observed after post-nitridation annealing. The change in the size of open volumes was attributed to the trapping of nitrogen by such regions, and an incorporation of nitrogen into the amorphous matrix of HfSiOx. We will demonstrate that the positron annihilation technique is a useful tool for studies of vacancies and open volumes in metal oxides.
Akira Uedono Shoji Ishibashi Nagayasu Oshima Toshiyuki Ohdaira Ryoichi Suzuki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsu Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science an
国际会议
上海
英文
1498-1501
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）