Phase formation and stability of Ni silicide contacts-scaling to ultra-thin films
We discuss the effect of scaling of the Ni thickness on the formation and stability of nickel silicide contacts. When scaling the Ni thickness from 15nm down to 5nm, the start of the agglomeration of the resulting NiSi layer is gradually shifted towards lower temperature. The influence of the microstructure of the polycrystalline NiSi layer on the agglomeration behavior, and methods to stabilize the NiSi film will be discussed. For an as deposited Ni film with a thickness less than 5nm, a completely different behavior is observed, where annealing results in the formation of a Ni silicide phase that exhibits an epitaxial orientation with respect to the Si substrate. Based on sheet resistance measurements and scanning electron microscopy, this ultra-thin film is surprisingly stable during post-annealing at high temperatures.
C. Detavernier K. De Keyser C. Van Bockstael J. Jordan-Sweet C. Lavoie
Department of Solid-state Physics, Ghent University, 9000 Ghent, Belgium IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA IBM T.J.Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA
国际会议
上海
英文
1502-1505
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）