会议专题

High-Resolution X-ray Microdiffraction Analysis of Local Strain in Semiconductor Materials

We have developed new microdiffraction system at the SPring-8. This system used a focused beam produced using a phase zone plate combined with a narrow slit, which made a focused beam with a small size and a small angular divergence. Furthermore we can use the two-dimensional x-ray CCD detector, which enable us to measure local reciprocal space maps at many points in a sample, that is, the distribution of strain fields and lattice tilts can be revealed in highangular- and high-spatial-resolution.

Shigeru Kimura Yasuhiko Imai Osami Sakata Akira Sakai

Research & Utilization Division, Japan Synchrotron Radiation Research Institute, Hyogo 679-5198, Jap Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1506-1509

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)