会议专题

Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth

The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Sii.,Gex(100) surfaces, is achieved at temperatures below 500 ℃. B doping dose of about 7×1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7×1013 cm-2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1_xGex(100) with P atom amount below about 4×l014cm-2 using Si2H6 instead of S1H4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain.

Junichi Murota Masao Sakuraba BerndTillack

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Technische Universitat Berlin, HFT4, Ein

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1513-1516

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)