Characterization of wafer-bonded substrates for advanced channels in Si-based MOSFET

摘要：

Wafer bonding is an attractive process to install new structures and materials, alternative to conventional bulk-Si substrates, to the CMOS channel layers on a Si platform. Although the process seems to be mature in the production of commercial silicon-on-insulator (SOI) substrates, careful consideration should be given to the case of hetero stacking structures, especially to the bonded interface which should have device grade quality. In this work, crystallinity, heterointerface chemistry, and electrical property are thoroughly analyzed by using advanced characterization tools for direct Si bonding (DSB) and germanium-on-insulator (GOI) substrates as prototypical wafer-bonded substrates.

作者: Akira Sakai

作者单位: Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka-shi, Osaka 560-8531, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1517-1520

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）