Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductors
By utilizing an electron-cyclotron-resonance plasma enhanced chemical vapor deposition (CVD) for lowtemperature epitaxial growth of group IV semiconductors, atomically controlled plasma processing has been developed to achieve atomic-layer doping and heterostructure formation with nanometerorder thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements in the plasma processing are reviewed: (1) By N and B atomic-layer formation and Si epitaxial growth on Si(100), heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in an about 2 nm-thick region. (2) Using a 84％ relaxed Ge buffer layer formed on Si(100) by the plasma CVD, formation of a B-doped highly strained Si film with nanometer-order thickness with typical hole mobility enhancement as high as about 3 was achieved.
Masao Sakuraba Junichi Murota
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
国际会议
上海
英文
1521-1524
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）