Defect characterization and control for SiGe-on-insulator

摘要：

Defccts in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge％), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge％. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

作者: Dong Wang Haigui Yang Hiroshi Nakashima

作者单位: Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1525-1528

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）