Backside de-processing technique advantages in IC failure analysis

摘要：

In this work, backside failure analysis techniques involving bulk Si de-processing, backside defect investigation and backside passive voltage contrast (PVC) are presented. Compared to Choline Hydroxide, TMAH_IPA has higher Si:SiO2 selectivity and faster etch rate. Backside failure analysis shows missing active silicidation causing SRAM memory BIST failure, which could not be firmly concluded from front side analysis. The backside failure analysis was also applied successfully on gate oxide breakdown investigation. In addition, backside passive voltage contrast (PVC) method was introduced to isolate the abnormal via chain on n+ active area.

作者: Y. G. Li

作者单位: Systems on Silicon Manufacturing Company Pte. Ltd., 70, Pasir Ris Drive 1, Singapore 519527

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1529-1532

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）