Structural evolution of the incubation layer in microcrystalline silicon films deposited by Jet-ICPCVD
Hydrogenated microcrystalline silicon films without an amorphous incubation layer were deposited on glass substrates at a high rate and a low temperature by a jet-type inductively coupled plasma chemical vapor deposition technique. It was observed that the amorphous incubation layer present at the initial stage of the deposition gradually crystallized during the growth process, and an almost completely crystallized layer was obtained. It is believed that abundant hydrogen atoms with sufficient energy diffuse into the incubation layer and subsequently annealing through a hydrogen mediated chemical reaction to induce the structural evolution of the incubation layer.
Zewen Zuo Yu Wang Yu Xin Jin Lu Junzhuan Wang Lin Pu Yi Shi Youdou Zheng
School of Electronic Science and Engineering, and Key Laboratory of Photonic and Electronic Material School of Physical Science and Technology, Soochow University, Suzhou 215006, China
国际会议
上海
英文
1536-1538
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)