The Research of Piezoresistive Effect in Different Temperature Based on AlGaN/GaN HEFT-micro-accelerometer
in this paper, we use a novel way to research the piezoresistance coefficients of AlGaN/GaN HEFT affected by the changes of temperatures in the structure of micro-accelerometer. It is shown that saturation current of HEFT would decrease with the increasing temperature, which is about 0.028mA/℃. However, the device can work well at the temperature range of -50℃ to 50℃, which indicates that it can work safely in the larger temperature range. Additional we find that the piezoresistance coefficient of HEFT is declined by the simultaneous increase in the temperature.
GaN HEFT temperature-dependence I-V characteristic gravity
Jianjun Tang Ting Liang
North Universuy of China. National Key Laboratory of Science and Technology on Electronic Test and Measurement Taiyuan 030051, P. R. China
国际会议
上海
英文
1542-1544
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）