A comprehensive transport model for the electron mobility in wurtzite AlxGa1-xN lattices-matched to GaN

摘要：

A comprehensive model for the electron mobility in wurtzite AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The proposed model describes the variation of the field-dependent mobility with carrier concentration, temperature, Al composition, random alloy, etc., showing good agreements with previous results. More emphases have been put on the effects of the temperature and random alloy in this work.

作者: Qing-Yang Yao Lin-An Yang Yue Hao

作者单位: School of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1545-1547

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）