Impact of forming gas annealing on ZnO-TFTs

摘要：

ZnO-based thin film transistors (ZnO-TFTs) were fabricated by sputtering of ZnO on 200 nm SiO2 on p+Si substrates. Forming gas annealing (FGA) was carried out directly after deposition at 400℃, 450C, and 500℃ for 1h. TFTs annealed at 400℃ exhibited a high threshold voltage (VTh) of 11 V while diose annealed at 500℃ showed a low VTh, of -3 V. Saturation mobility (μsat) increased slightly with temperature to about 1 cm2/Vs. The effect of FGA at 450℃ was also compared to oxygen (O2) annealing at the same temperature and it was observed that VTh, was higher and saturation mobility was lower after oxygen annealing. It is concluded that an improvement of electrical properties with forming gas annealing is due to incorporation of hydrogen in the active ZnO layer. Hydrogen at oxygen vacancy sites bonds to four Zn atoms (i.e., H forms a multicenter bond) and acts as a shallow donor in ZnO.

作者: J. Huang U. R. Krishna M. Lemberger M. P. M. Jank H. Ryssel L. Frey

作者单位: Fraunhofer Institute for Integrated Systems and Device Technology (IISB) Schottkystrasse 10, 91058 Erlangen, Germany

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1548-1550

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）