Activation characteristics of Si-implanted GaN by rapid thermal annealing
The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. Highresolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100℃. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2 and a minimum sheet resistance 100Ω/□. Two exceptional blue luminescence (BL) bands, i.e. one 2.61eV for the asimplanted sample and another 2.67eV for the sample with 1100℃ RTA, respectively, are observed in the photoluminescence spectra, both of which are different from previous reported results, the 2.61 BL band emission is mainly attributed to the acceptor level of complex VGa-SiGa generated by the wear-selfcompensation effect, and the 2.67eV BL emission is attributed to the transition from the SiGa donor level to complex VGa-ON acceptor level.
gallium nitride HRXRD photoluminescence ion implantation
Jiangfeng Du Jinxia Zhao Qi Yu Mohua Yang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
国际会议
上海
英文
1554-1556
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）