Ge/SiO2 Low Temperature Wafer Bonding

摘要：

Atomic level Ge/SiO2 direct wafer bonding was achieved at 150℃. The microstructures of the bonding interface were characterized by transmission electron microscopy. Our investigation indicated that the completed Ge/SiO2 bonding interface without nano-gaps can be required only if the proper pretreatment was applied. That is probable reason that the high defect (a great number of pits) density on the surface of the transferred Ge layer in GeOI was caused through these buried interface nano-gaps which were invisible by an infrared inspect due to the limited resolution.

作者: Jian Xin Shen Xuan Xiong Zhang Tian Chun Ye Songlin Zhuang

作者单位: Shanghai Key Laboratory of Modern Optical System University of Shanghai for Science and Technology, Shanghai Key Laboratory of Modern Optical System University of Shanghai for Science and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1557-1559

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）