An improved electron mobility model for wurtzite ZnO

摘要：

An improved analyticl model for the electron mobility in wurtzite ZnO is developed. The numerical results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The improved model describes properly the variation of the fielddependent mobility with carrier concentration and temperature, not only for room temperature but also for temperatures considerably higher than 300K, showing good agreements with previous results.

作者: Lin-An Yang Qing-Yang Yao Xu-Hu Zhang Qi Liu Yue Hao

作者单位: Department of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1566-1568

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）