Raman scattering investigation of defects in thick homoepitaxial 4H-SiC films

摘要：

Three types of defects, namely comet I, comet II and carrot, in thick 4H-SiC homoepilayer were investigated by the micro-Raman scattering measurements. Comet defects were originated from certain cores which caused by the point defects or the inclusions on the surface of the substrate. 3CSiC inclusions, which were not contained in carrot, were found in comet defects. The different distribution of 3C-SiC in comet I and comet II was investigated by using micro-Raman scattering measurement. The formation mechanisms of these three defects were discussed.

关键词： 4H-SiC comet 3C inclusions carrot micro-Raman

作者: Hailei Wu Guosheng Sun Guoguo Yan Lei Wang Wanshun Zhao Xingfang Liu Yiping Zeng Jialiang Wen

作者单位: Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, China Electric Power Research Institute, Beijing 100192, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1569-1571

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）