SiC Warm-Wall LPCVD Growth on Multiple 50-mm Diameter Wafers
Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating susceptor that can support up to six 50 mm-diameter wafers. Results from the initial growth runs are presented. The results have shown that all the films exhibited a SiC(111) texture at 35.6°. Also, atomic force microscopy (AFM) scans indicated an atomically smooth surface with a roughness (RMS) of 5.74 run (5×5μm2).
Silicon carbide Multi-wafer Chemical vapor deposition Heteroepitaxy
Guoguo Yan Jialiang Wen Guosheng Sun Hailei Wu Yongmei Zhao Jin Ning Lei Wang Wanshun Zhao Xingfang Liu Yiping Zeng
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China China Electric Power Research Institute, Beijing 100192, China
国际会议
上海
英文
1575-1577
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）