Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures

摘要：

Size-controlled nanocrystals (Si NCs) in floating gate MOS structure have been fabricated by thermal annealing of Si-rich SiNx layers with high ratio of Si/N. High resolution transmission electronic microscopy (HRTEM) reveals the size of Si NCs can be controlled by varying the thickness of Si-rich SiNx layer. Based on the analysis of XPS and Raman measurement, the relation between the size of Si NCs and the thickness of Si-rich SiNx is discussed.

作者: Zhong-Hui Fang Kun-Ji Chen Zhong-Yuan Ma Guang-Yuan Liu Xin-Ye Qian Xiao-Fan Jiang Xian-Gao Zhang Xin-Fan Huang

作者单位: State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, Peoples Republic of China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1581-1583

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）