High-K dielectric stack percolation breakdown statistics

摘要：

A cell-based analytical percolation model recently proposed for the dielectric breakdown (BD) of high-K stack gate dielectrics is reformulated in terms of competing local percolation paths. The model is equivalent to kinetic Monte Carlo implementation of percolation and it is shown to be consistent with large sample size statistical data. This is a physics-based picture that predicts the scaling of the BD distribution with the oxide area and with the thickness of each stack dielectric layer. As an application exercise, we consider the scaling of the stack reliability when the SKVbased interface layer thickness is scaled towards zero at constant equivalent oxide thickness (EOT).

作者: Jordi Sufie Ermest Y. Wu S. Tous

作者单位: Department dEnginyeria Electronica. Universitat Autonoma de Barcelona, 08193-Bellaterra, SPAIN IBM Microelectronics Division, Essex Junction, VT (USA)

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1588-1591

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）