NBTI-related issues in deep submicron pMOSFETs

摘要：

Negative Bias Temperature Instability (NBTI) is an important reliability problem in deep submicron PMOSFETs. In this paper, we review the recent literature on the possible theoretical foundations and experimental features of NBTI degradation. These features, including temperature activation energy, recovery and SILC under NBTI, actually reflect the different aspect of the same physics mechanism of NBTI. These findings are expected to provide new evidences for understanding the matter.

关键词： Negative Base Temperature Instability (NBTI) Hole Trapping interface state trap SILC E center K center

作者: F.Yan X.Ji Y.Liao X.Cheng X.Zhu Y.Shi D.Zhang O.Guo

作者单位: Institute of Electronics Science and Engineering, Nanjing University, Nanjing 210093,China Institute of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China QRE/Reliability Engineering,Semiconductor Manufacturing International Corporation, Beijing 100176, C QRE/Reliability Engineering, Semiconductor Manufacturing International Corporation, Beijing 100176,

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1608-1611

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）