Investigation of Tunneling Field Effect Transistor Reliability

摘要：

This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis 1-3. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.

作者: G. F. Jiao Ming-Fu Li X. Y. Huang Z. X. Chen W. Cao D. M. Huang H. Y. Yu N. Singh G Q. Lo D.-L. Kwong

作者单位: State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, Institute of Microelectronics, A*STAR (Agency for Science, technology and Research), Singapore 11768 Institute of Microelectronics, A*STAR (Agency for Science, technology and Research), Singapore 11768

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1612-1615

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）