Characteristics between Electrical Properties and Controlling of Oxygen Precipitations during ULSI Process
Controlling of oxygen precipitation is an important factor for increasing the product yield in ULSIprocessing. Especially, the behavior of oxygen in Czochralski grown (CZ wafer) silicon has been intensely studied in the last few years because of the beneficial and harmful effects that oxygen precipitates and oxygen precipitate-induced dislocation loops can have on the manufacture of electronic devices in silicon wafers. This paper will review four topics associated with the use of Czochralski silicon: the kinetics associated with nucleation and growth of oxygen precipitates in the bulk of the wafer; the creation of defect free denuded zones at the front surface of wafers; the creation and annihilation of oxygen related donors; and the role of thermal cycle in oxygen precipitation. Defect issues such as the control of oxygen precipitation and intrinsic point defect related micro-defects have been at the centre of this enterprise for many years. These are very difficult and complex problems from both a scientific and an engineering point of view. They are, importantly, highly coupled problems. Because of the complexity inherent in some of these problems, more often than not solutions to issues presented by such problems have produced rather highly tuned measures specific to certain applications. As semiconductor substrate wafer size and the manufacturing process steps are continuous to increase, several reliability concerns will become more important. An in depth evaluation of internal getter ing effectiveness in Si wafers has been run based on iron and nickel intentional contamination followed by minority carrier recombination centers measurements.
Bulk Micro-defects Oxygen Precipitations Mechanism ULSI manufacturing Thermal Cycle
Po-Ying Chen Shih-Chun Hung Wen-Kuan Yeh Ming Hsiung Tsai Wei-Chou Chen Kang-Ping Li Pei-Chen Yeh Hsin-Ying Huang
Department of Information Engineering,I-Shou University, No. 1, Sec. 1, Syuecheng Road., Dashu Towns Department of Information Engineering, I-Shou University, No. 1, Sec. 1, Syuecheng Road., Dashu Town Department of Electronic Engineering, National University of Kaohsiung, No. 700, Kaohsiung Universit
国际会议
上海
英文
1616-1618
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）