Comparison of the On-Resistance degradation in pLEDMOS with the different geometrical parameters
In this paper, the influence of the different length of the drift region and the field plate upon HotCarrier-Induced on-resistance (Ron) and threshold voltage (Vth) degradation in p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide has been investigated. It was concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation. However, increasing the length of field plate can reduce the degradation of both Ron and Vth. Technology computer-aided design (TCAD) simulations reveal that the improvement is due to the decrease of impact ionization rate and perpendicular electric field in the accumulation and channel region. It also has been found in this paper that hot carrier injection mostly appears in the first 103s and then begins to saturate.
p-type lateral extended drain MOS (pLEDMOS) thick gate oxide hot-carrier-induced degradation on-resistance degradation
Hu Sun Qin-Song Qian Wei-Feng Sun Si-Yang Liu
National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu, China National ASIC System Engineering Research Center, Southeast University,Nanjing, Jiangsu, China
国际会议
上海
英文
1619-1623
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）