An Improved Static NBTI Model with Physical Geometry Scaling

摘要：

Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.

作者: Yue Zhang Miao Li Yan-Feng Li Xiao-Hua Ma Yan-Rong Cao Yue Hao

作者单位: School of Microelectronics, Xidian University, Xian, 710071, China Accelicon Technologies, Inc, 100085, China School of Technical Physics, Xidian University, Xian, 710071, China School of Electronical & Machanical Engineering, Xidian University, Xian, 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1624-1626

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）