A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

摘要：

A capacitance coupling complementation silicon controlled rectifies (CCCSCR) for electrostatic discharge (ESD) protection application is proposed and verified in 0.5μm BCD process. Compared with traditional complementation silicon controlled rectifies (CSCR), the CCCSCR has a lower trigger voltage. The coupling capacitance, as a tunable trigger of SCR, can meet different protection application demands. And the CCCSCR can fulfill all dual direction ESD stress mode protection, including I/O-VSS, I/O-VDD and VDD-VSS.

关键词： Capacitance coupling CSCR ESD trigger voltage

作者: Mingliang Li Shurong Dong Meng Miao Bo Song Fei Ma Yan Han

作者单位: ESD Lab, Dept. of ISEE, Zhejiang University, Hangzhou, 310027, China ESD Lab, Dept. of ISEE, Zhejiang University,Hangzhou, 310027, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1633-1635

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）