Logarithm Cofactor Difference Extrema of MOS Devices Post-Breakdown Current and Application to Parameter Extraction

摘要：

This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices post-breakdown current. The experimental results of the post breakdown current in MOS devices at different temperature are used to demonstrate the validity of the advanced LogCDO method. The post-breakdown current is equivalent to a dual diode circuit model, and then the LogCDO method is applied to extract key model parameters. The extraction results are consistent very well with the measured data over a wide range of temperature.

作者: Chenyue Ma Chenfei Zhang Xiufang Zhang Frank He Xing Zhang

作者单位: The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking U The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1639-1641

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）