CMOS NBTI degradation and recovery behaviors in a wide temperature range
Negative Bias Temperature (NBT) degradation in PMOS device with ultrathin SiON gate dielectric has been investigated at the temperature ranging from 218 K to 463 K. It is found that the degradation has different time-dependence behavior and activation energy above and below 268 K, evidencing two mechanisms in NBT degradation. One is related to interface state traps suggested in classic R-D model with neutral hydrogen atoms (H) as the diffusion species. The other is the hole trapping generation. The later dominates NBT degradation below 268 K. The possible hole trapping mechanism is proposed as inelastic hole tunneling and trapping into oxygen and nitrogen-related trap precursors under NBT stress.
Negative Base Temperature Instability Interface States Inelastic Hole Trapping Activation Energy
X.Ji Y.Liao B.Yu F.Yan Y.Shi D.Zhang Q.Guo
Institute of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China QRE/Reliability Engineering, SMIC, 18 Wenchang Road, BDA, Beijing 100176, P. R. China
国际会议
上海
英文
1642-1644
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）