会议专题

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.

E.Amat E.Simoen R.Rodriguez M.B.Gonzalez J.Martin-Martinez M.Nafria XAymerich V.Machkaoutsan M. Bauer P.Verheyen

Electronic Engineering Department, Universitat Autdnoma de Barcelona (Spain) Imec, Leuven (Belgium) ASM Intemation, Leuven (Belgium) ASM International, Phoenix (USA)

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1648-1650

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)