Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain
Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.
E.Amat E.Simoen R.Rodriguez M.B.Gonzalez J.Martin-Martinez M.Nafria XAymerich V.Machkaoutsan M. Bauer P.Verheyen
Electronic Engineering Department, Universitat Autdnoma de Barcelona (Spain) Imec, Leuven (Belgium) ASM Intemation, Leuven (Belgium) ASM International, Phoenix (USA)
国际会议
上海
英文
1648-1650
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)