Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

摘要：

Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.

作者: E.Amat E.Simoen R.Rodriguez M.B.Gonzalez J.Martin-Martinez M.Nafria XAymerich V.Machkaoutsan M. Bauer P.Verheyen

作者单位: Electronic Engineering Department, Universitat Autdnoma de Barcelona (Spain) Imec, Leuven (Belgium) ASM Intemation, Leuven (Belgium) ASM International, Phoenix (USA)

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1648-1650

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）