The Influence of Mechanical Strain on the Nanoscale Electrical Characteristics of Thin Silicon Dioxide Film

摘要：

Strain has been introduced into the channel region of metal-oxide-semiconductor (MOS) field-effect transistor to improve its operating speed in modern integrated circuits (IC). In this work, we investigated the influence of uniaxial compressive and tensile strains on the nanoscale electrical characteristics of thin gate silicon dioxide (SiO2) films. Both the nanoscale I-V characteristics and cumulative failure distribution of oxide breakdown voltage at various positions on the surface of thin S1O2 films were determined by using the conductive atomic force microscopy (CAFM). It is found that, for either compressive or tensile uniaxial strain, the region in which the highest strain (the central region) exists always exhibits higher oxide leakage current and lower oxide breakdown voltage.

作者: You-Lin Wu Bo-Tsuen Chen Jing-Jenn Lin

作者单位: Department of Electrical Engineering, National Chi Nan University, Nantou, Puli, Taiwan 54561 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou,

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1651-1653

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）