The Characteristics and Failure Mode Analysis of RFIDs Tag used in High/Low Temperature Environment
This study proposes a brand new method for identifying the mechanism that obtains when various current densities are individually applied to the architecture of RFIDs Tag. A multi-steps current-destroying method was applied to clarify the effect of current density and the failure mechanism. Both the environments and testing qualifications for RFID are becoming increasingly demanding. Failure mechanisms assumed to have been eliminated, or at least to have been alleviated to some extent in new package technology designs, are once again challenges to their process integrity and reliability. Because of dynamic loading induced by mechanical vibration and impact shock negatively impacting reliability for RFIDs Tag, analytical models and simulations of some mechanisms were developed. This work examines the reliability of a RFIDs Tag subjected to various accelerated current stressing conditions under a fixed ambient temperature of 125 ℃. A reasonable correlation was obtained between mean-time-to-failure (MTTF) of the test vehicle and the average current density carried by a antenna metal line was obtained.
Radiofrequency Identification Reliability Tagr Failure mode n Mechanism
Po-Ying Chen Shih-Chun Hung Wen-Kuan Yeh Wei-Chou Chen Kang-Ping Li Pei-Chen Yeh Hsin-Ying Huang
Department of Information Engineering, I-Shou University, No. I, Sec. 1, Syuecheng Road, Dashu Towns Department of Electronic Engineering, National University of Kaohsiung, No. 700, Kaohsiung Universit
国际会议
上海
英文
1654-1656
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）