Investigation of ESD second breakdown TCAD simulation

摘要：

This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.

作者: Cai Xiaowu Yan Beiping Han Xiaoyong

作者单位: Hong Kong Applied Science and Technology Research Institute Company Limited (ASTRI) 3/F, 2 Science Park West Avenue, Hong Kong Science Park, Shatin, New Territories, Hong Kong

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1665-1667

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）