Design and thermal analysis of SiGe HBT with non-uniform finger length and non-uniform finger spacing
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure power SiGe HBT, the maximum junction temperature of novel structure reduce significantly from 416.1K to 412K, the thermal resistance reduce from 154.8K/W to 149K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.
Liang Chen Wan-rong Zhang Dong-yue Jin Ying Xiao Ren-qing Wang
College of Electronic Information and Control Engineering, Beijing University of Technology,Beijing, 100124,China
国际会议
上海
英文
1668-1670
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)