Design and thermal analysis of SiGe HBT with non-uniform finger length and non-uniform finger spacing

摘要：

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure power SiGe HBT, the maximum junction temperature of novel structure reduce significantly from 416.1K to 412K, the thermal resistance reduce from 154.8K/W to 149K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

作者: Liang Chen Wan-rong Zhang Dong-yue Jin Ying Xiao Ren-qing Wang

作者单位: College of Electronic Information and Control Engineering, Beijing University of Technology,Beijing, 100124,China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1668-1670

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）