Experimental Research on the Damage Effect of HPM on Semiconductor Bipolar Transistor

摘要：

High power microwave (HPW) can cause the semiconductor devices failure,thereby make the electronic system work anomaly. Bipolar transistors are the typical semiconductor devices. In this paper, the effect of HPM on the bipolar transistors is studied through the HPM injection experiment. The experiment results show that the HPM injected into the devices could cause the degradation, distortion and damage of the transistor. The failure analyses of the tested devices indicate that the bipolar transistors cannot work mainly because the HPM damage the base-emitter junction in of the transistors. The HPM injected into the devices from the base significantly influenced on the characteristics of the device in the operating situation compared with the other pins.

作者: Hailong You Juping Fan Xinzhang Jia Ling Zhang

作者单位: School of Microelectronics, Xidian University, Xian,Shaanxi ,710071, China School of Microelectronics, Xidian University, Xian,Shaanxi ,710071, China Northwest Institute of N

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1671-1673

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）