Forward Gated-Diode Method for Extracting Gate Oxide Thickness and Body Doping Concentration

In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (RG) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation data.
Chenfei Zhang Chenyue Ma Frank He Xiufang Zhang Zhiwei Liu
The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking U The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, W303, West Tower, IER B
国际会议
上海
英文
1674-1676
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)