An Analytical Model for Negative Bias Temperature Instability

摘要：

Negative bias temperature instability (NBTI) has become one of the major limiters for product lifetime, and various models have been proposed in order to explain NBTI. In this paper, an analytical model for DC NBTI and AC NBTI is proposed. This model describes the different time dependence of DC NBTI degradation at both short- and long-term stresses, and also reproduces the frequency and duty cycle dependencies of NBTI under AC stress.

作者: Shengcheng Wang Gang Du Xiaoyan Liu

作者单位: Department of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1686-1688

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）