Investigation on the Role of Hole Traps under NBTI stress In PMOS Device with Plasma-Nitrided Dielectric Oxide
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K. center) In SiON. The traps location in SiO2 and SiON are investigated by chargepumping (CP) technique. In SiON most of Nitrogenrelated traps located away from SiON/Si interface. The traps in SiO2 (E center) are at SiO2/Si interface. Based on the result of CP, nitrogen related traps located at a distance from SiON/Si interface (Yo=10-5s), we use the inelastic tunneling model to fit the degradation data of NBTI for PNO PMOSFET at 268K and 218K. Simulation results indicate a good agreement with the experimental data. These results show the nitrogen related traps play an important role in hole trapping under NBTI stress.
Y.Liao X.Ji F.Wu X.Zhu F.Yan Y.Shi D.Zhang Q.Guo
Institute of Electronics Science and Engineering, Nanjing University, Hankou Road 22,Nanjing 210093, QRE/Reliability Engineering, SMIC, 18 Wenchang Road, BDA, Beijing 100176, P. R. China
国际会议
上海
英文
1695-1697
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）