Investigation on the Reliability Corner of pMOSFETs with Drain-Bias-Dependent NBTI Degradation

摘要：

A detailed experimental study on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation was conducted. Unlike to the conventional NBTI degradation, the concurrent drain bias stresses exhibit a complex correlative effect in both degradation and recovery stages. Our results show that the degradation of NBTI with drain bias at Vdd becomes the worse reliability corner for pMOSFETs with ultra thin gate oxynitride. A new evaluation method for pMOSFET reliability was proposed.

作者: Yandong He Ganggang Zhang Xiaorong Duan

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1704-1706

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）