New Observations on Random Trap Fluctuation (RTF) Induced Vth Variation in Nano-CMOS Devices
Newly developed mechanisms of VTh variability is proposed to study the impact of hot carrier and NBTI stress effects in nMOSFET and pMOSFET respectively. Moreover, a new RTN measurement, VTh RTN, is utilized to characterize the random trap fluctuation (RTF) induced VTh variation. It was found that not only the popular random dopant fluctuation (RDF), but also the traps, caused by the hot carrier (HC) stress, induce the Vth variation. After the HC stress, VTh, variation is enhanced in pMOSFETs due to RTF and reduced in nMOSFETs due to Trap Blocking Effect (TBE). Also, for the NBTI stress in pMOSFET, the interface traps are highly accumulated and saturated, i.e., the trap blocking effect(TBE) dominates the decrease of V,h variation. These results will be helpful for the understanding of physics inside the Vth variation and provide the design of reliability in the advanced CMOS devices beyond 28nm technology node.
E. R. Hsieh C. Y. Cheng Steve S. Chung C. H. Tsai R. M. Huang C. T. Tsai C. W. Liang
Department of Electronics Engineering, National Chiao Tung University, Taiwan United Microelectronics Corporation, Taiwan
国际会议
上海
英文
1713-1715
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）