会议专题

The Failure of VDMOS Device Caused by the Mismatch of Coefficient of Thermal Expansion

VDMOS device (Vertical Double-diffused Metal Oxide Semiconductor) has the features of higher input impedance, lower drive current, higher switching speed, better frequency characteristic, bigger safety operating area and better thermal stability, which is used in many fields, such as switches in power electronic systems, so it has become the research focus of discrete power semiconductor devices. In this paper, the damage of VDMOS devices is discussed which is caused by the CTE (coefficient of thermal expansion) mismatch between the plastic encapsulated body and the chip during temperature changed environment. The surface and cross-section microstructure of the chips are observed by SEM and AFM. Thermal stress effect on plastic encapsulated body and the chip bonding and cause the interface and chip cracking, which occur on the position of chip edge specially.

Yin Jinghua Xu Dan Hua Qing He Yanqiang Song Mingxin Cao Yijiang

Harbin University of Science and Technology, Harbin, 150080 China Jilin Institute of Chemical Technology, Jilin, 132022.China

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1716-1718

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)