A Unified Compact Model for Emerging DG FinFETs and GAA Nanowire MOSFETs Including Long/Short-Channel and Thin/Thick-Body Effects

摘要：

This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects. A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.

作者: Xing Zhou Guojun Zhu Machavolu K. Srikanth Shihuan Lin Zuhui Chen Junbin Zhang Chengqing Wei

作者单位: School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1725-1728

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）