Unified Analytical Modeling of GAA Nanoscale MOSFETs

摘要：

An analytical model is presented for the 3D subthreshold electrostatics of low-doped gate-allaround MOSFETs with circular and square cross sections. The model is based on a solution of the 3D Laplace equation utilizing the high symmetry of the devices and assuming near-parabolic potential distributions in the directions perpendicular to the gates for the central regions. To account for shortchannel effects, additional functional forms are used near source and drain. High precision is made possible by utilizing auxiliary boundary conditions obtained from a conformal mapping analysis. Combining this model with a long-channel approximation for strong inversion, the drain current in the full range of bias voltages is calculated. The model compares very well with numerical calculations obtained from the ATLAS device simulator.

作者: Santosh K. Vishvakarma Udit Monga Tor A. Fjeldly

作者单位: Department of Electronics and Telecommunication, Norwegian University of Science and Technology, UNIK-University Graduate Center, NO-2007 Kjeller ,Norway

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1733-1736

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）