Numerical Study on Terahertz Detection of MOS Field-Effect Transistor

摘要：

Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of MOSFETs as THz detectors, which may be helpful in the optimization of MOSFET in improving THZ detector performance.

关键词： Terahertz Detection MOSFET Numerical electronic Optical beating Heterodyne.

作者: Frank He Juncheng Cao Zhifeng Yan Jingxuan Zhu Wen Wu Zhiwei Liu Wenping Wang Yong Ma Dongwei Zhang Wei Zhao

作者单位: Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking Univ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, W303, West Tower, IER B

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1741-1744

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）