Quantum Transport and Electron-Phonon Interaction in Nanoscale MOSFETs

摘要：

Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metaloxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in ptype nanowire transistors are also investigated.

作者: Nobuya Mori Hideki Minari Genaddy Milnikov Yoshinari Kamakura

作者单位: Division of Electrical, Electronic and Information Engineering Graduate School of Engineering, Osaka Division of Electrical,Electronic and Information Engineering Graduate School of Engineering, Osaka

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1757-1760

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）