Experimental Extraction of Barrier Lowering and Backscattering in Saturated Short-Channel MOSFETs
In this work we propose a fully experimental method to extract the barrier lowering, at the operative bias point above threshold, in short-channel saturated MOSFETs using the Lundstrom backscattering transport model. At the same time we obtain also an estimate of the backscattering ratio. Respect to previously reported works, our extraction method is fully consistent with the Lundstrom model, whereas other methods make a number of approximations in the calculation of the saturation inversion charge which are inconsistent with the model. The proposed experimental extraction method has been validated and applied to results from 2D quantum corrected device simulation and to measurements on short-channel polySi/SiON gate nMOSFETs with gate length down to 70 nm.
Gino Giusi Giuseppe Iannaccone Debabrata Maji Felice Crupi
DEIS, University of Calabria, Via P. Bucci 41C, 1-87036 Arcavacata di Rende (CS), Italy DIIEIT, University of Pisa, Via Caruso 16,1-56126 Pisa, Italy Indian Institute of Technology, Bombay 400076, India
国际会议
上海
英文
1761-1764
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）