Multiple-Finger MOSFET Modeling for MS/RF Circuit Simulation

摘要：

This paper focuses on the modeling of the multiplefinger MOS transistors. Observation on the characteristics of the multiple-finger devices shown normalized saturation current, Idsat, (for various W but fixed L, in Figure 1) degrades with increases of number of fingers and it is worse for wider W. The conventional modeling of multiple finger devices, which simply multiplies the current of a single finger device by number of fingers, does not work for deep submicron device. The degradation comes from the parasitic resistance introduced during the measurement 1. Further study of transistor behavior with TCAD simulation revealed that resistance crowding effect in the drain and source in multiple-finger MOS diffusion and contact degrades the performance. With proper modeling of the resistance the current can be accurately predicted and the new model can be easily implemented in SPICE simulator.

作者: Waisum Wong Jenhao Cheng July He Xuejie Shi Jason Wu Howard Gan Tao Jiang Lianfeng Yang James Ma

作者单位: SMIC, Shanghai, PRC Santa Clara, CA., USA Proplus Solution, Santa Clara, CA., USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1774-1777

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）