Transient effects of graded-channel partially depleted SOI nMOSFET

摘要：

The transient effect of graded channel partiallydepleted silicon-on-insulator nMOSFETs are analyzed by SILVACO ATLAS software. The switch on and switch off transient behaviors are studied for the device. While the device operates in the kink region, the transient effects of drain current were also investigated. It was found that the transient characteristic of the graded channel device was superior to the conventional device and changing the parameters of the graded channel device can cause various transient behaviors.

作者: Minghua Tang Yongguang Xiao Lianbao Zhang Xiaolei Xu Jun Zhang Junxiong Tang

作者单位: Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University), Ministry of Education, Xiangtan, Hunan, 411105, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1792-1795

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）