Subthreshold Swing Model for Asymmetric 3T Double Gate (DG) MOSFETs

摘要：

In this paper, a short-channel subthreshold swing model for three-terminal (3T) double-gate (DG) MOSFETs with Gaussian doping profile in the vertical direction of the channel is presented. The effective conduction path effect concept of uniformly doped DG MOSFETs is utilized to incorporate the doping dependency in the present model. The effect of varying peak doping position of Gaussian profile on the subthreshold swing is studied.

作者: Pramod Kumar Tiwari Sarvesh Dubey S. Jit

作者单位: Centre for Research in Microelectronics, Department of Electronics Engineering, IT-BHU, Varanasi-221005, India

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1796-1798

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）